Abstract
Auger electron spectroscopy has been used to study indium grain boundary segregation in symmetric «110å tilt boundaries and randomly oriented boundaries in bicrystals as well as polycrystals of NiIn containing 0.l–1.4 at. % In. Quench-induced non-equilibrium segregation of In, caused by fluxes of In vacancy complexes to the interfaces, influenced the results for quenching temperatures above 1000–1100 K. A careful analysis of sputtering profiles supplied additional informations for the discussion with respect to current models of QINS. From the equilibrium segregation behaviour for the symmetric boundaries both the segregation enthalpies ( ΔH se = 38 ± 3 kJ/mol and ΔH seg = 39 ± 3 kJ/mol) and the mean segregation entropy [ ΔS seg = (0 ± 0.5) R] have been determined for the first time. The segregation free energy for 970 K is ΔG seg = 50 ± 5 kJ/mol for the polycrystals. The symmetric atomic arrangement along the tilt boundaries is assumed to be responsible for the low segregation entropy.
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