Abstract
CuAuAg/n-Si/Ti diode has been fabricated and temperature dependences of current voltage (I-V) characteristics have been analyzed based on thermionic emission (TE) theory in the temperature range of 80–300 K. The electronic parameters such as, ideality factor, barrier height and series resistance were calculated. It is found that the values of the ideality factor increase and barrier height decrease with decreasing temperature. The ideality factor and barrier height values as a function of the sample temperature have been attributed to the presence of the lateral inhomogeneities of the barrier height.
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