Abstract
In this paper, an ultra wide band-low noise amplifier (UWB-LNA) is presented using two new noise cancellation and bandwidth enhancement techniques. The noise cancellation technique was performed using two additional transistors to a common-gate differential amplifier, while the presented amplifier provides a new concept of series inductors to increase the practical bandwidth. Simulation results demonstrate that the minimum noise figure and S21 are 2.75 dB and 21.3 ± 1 dB, respectively. Meanwhile, the average IIP3 in the entire band is 7.5 dB m and the power consumption is 5.15 mW from a 1.2 V power supply. It should be noted that the circuit was simulated in a 65 nm TSMC RF CMOS technology at a bandwidth of 4–11.5 GHz with cadence spectre tool, and has an occupied area of 731 μm × 1816 μm.
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