Abstract
We have successfully synthesizedSr2V1−xMoxO4 fromx = 0.3 to 1.0 by an improved process. The layered compoundSr2VO4 is an antiferromagneticinsulator with S = 1/2, whilethe isostructural Sr2MoO4 is a Pauli paramagnetic metal. The solid solutionSr2V1−xMoxO4 of these materials is expected to show a metal–insulator transition. In this paper wereport the synthetic process and the results of the magnetic susceptibility and theelectrical resistivity. The selection of the starting materials and the adjustment ofO2 partial pressureof less than 10−12 atm were indispensable for the synthesis. The reducing conditions during the sintering hadbeen determined rationally, according to thermodynamical analysis. Kondo-like behavior inboth resistivity and magnetic susceptibility were observed in a limited range ofV-containing samples.
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