Abstract
ABSTRACTInSb has a large carrier mobility and a high sensitivity in the infrared wavelength range (3–5 μm), which makes it a good quantum dot material for infrared (IR) detectors. In this study, the synthesis of the nanocrystalline III-V semiconductor indium antimonide (InSb) by solvothermal reduction methods was investigated. InSb was synthesized by using indium (III) chloride and antimony (III) chloride as the starting materials and sodium borohydride as the reducing agent. Pure-phase InSb was successfully produced with diethylenetriamine and tetraethylenepentamine as the solvents and a Schlenk line apparatus as the reaction vessel. X-ray diffraction (XRD) was used to verify the successful production of InSb and transmission electron microscopy (TEM) was used to determine the particle size and shape of the product. In the future, growth kinetics of the particles will be investigated as they relate to their spectroscopic quantum confinement effects.
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