Abstract
The main physical and chemical processes involved in the preparation of SiO2-ZrO2 thin films from film-forming solutions based on zirconium oxochloride ZrOCl2·8H2O, tetraethoxysilane Si(C2H5O)4, and ethanol were studied. The phase composition, structure and physical and chemical properties of the films were determined and the diagram composition — property was constructed.
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