Abstract
Here we prepared vertical and single crystalline porous silicon nanowire (SiNW) arraysusing the silver-assisted electroless etching method. The selenization was carried out byannealing the samples in vacuum with selenium atmosphere. The selenization treatment at700 °C is useful for investigating the photoluminescence (PL) properties of porous SiNWs,with an enhancement of 30 times observed. The observed PL peaks blue-shiftto 650 nm and the decomposition of the spectrum reveals that three PL bandswith different origins are obtained. It is proved that selenization treatment couldremove the Si–H bonds on the surface and form Si–Se bonds, which could increasethe absorbance of the SiNWs and also enhance the stability of the PL intensity.These Se-treated porous SiNWs may be useful as nanoscale optoelectronic devices.
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