Abstract
This work examines the impact of the chemistry of the gas mixture (N 2 /H 2 ) and the plasma-related operating conditions on etching and/or passivation of siloxane-based polymer (HOSP) films. Plasmas generated using an inadequate power source and an H 2 -dominating chemistry tend to induce the removal of carbonaceous species and over-cross-linking from such a film's structure. sharply degrading the film's dielectric constant (k) and insulating capacity. Nonetheless, properly adjusting the operating power supply and shifting the gas mixture toward the N 2 -dominant regime cause the N 2 /H 2 plasma to outperform the commonly used NH 3 and N 2 plasmas with respect to protecting the films against O 2 plasma damage, by forming a surface nitride layer.
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