The switching characteristics of Shottky-barrier diodes under high-level injection with a non-zero field at the depletion layer edge

Abstract

This paper presents a modified model for Shottky-barrier diodes under high level injections. The presented model takes into account the field at the depletion layer boundary. Previous models have neglected this field, which seems relevant for planar technology with a relatively long epi-layer. The model shows that the field has remarkable effects on both the injection ratio and the storage time. The model also proves to be accurate for long and short epi-layers as well as usable for all injection levels. The non-zero field at the depletion layer edge, considered in this model, shows that previous models have overestimated the switching characteristics of Shottky-barrier diodes, namely the injection ratio, γ, and the storage time, Ts.