The Surface Texturing of Monocrystalline Silicon with NH4OH and Ion Implantation for Applications in Solar Cells Compatible with CMOS Technology

Abstract

This work presents the development of photovoltaic cells based on p+/n junction in Si substrates, aimed at compatibility with fabrication processes with CMOS technology. The compatible processes, which are developed in this study, are the techniques:i) Si surface texturing, with the textured surface reflection of 15% obtained by the formation of micro-pyramids (heights between 3 and 7μm) using NH4OH (ammonium hydroxide) alkaline solution, which is free of undesirable contamination by Na+ and K+ ions, when NaOH and KOH traditional solutions are used, respectively, and ii) of the ECR-CVD (ElectronCyclotron Resonance - Chemical Vapor Deposition) deposition of SiNx (silicon nitride) anti-reflective coating (ARC), which is carried out at room temperature and can be performed after the end of cell fabrication without damage on metallic tracks and without variation of p+/n junction depth. The ARC coating characterization presented that the silicon nitride has a refractive index of 1.92 and a minimum reflectance of 1.03%, which is an excellent result for application in solar (or photovoltaic) cells. For the formation of the pn junction was used ion implantation process with 11B+, E=20KeV, dose of 1x1015cm2 and four rotations of 90° to get uniformity on texturized surfaces.