Abstract
The surface morphology and electronic properties of a low energy boron implanted diamond films with shallow doping, prepared by microwave plasma enhanced chemical vapour deposition (CVD), have been characterised by atomic force microscopy (AFM), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) techniques.Both AFM and STM images taken at different locations on the films have exhibited similar morphological features on the (100) crystal surfaces. The crystal surfaces are not atomically flat but are composed of many hillocks as shown in Fig 1(a) to 1(c). The majority of values measured from the peaks of hillocks to the valleys are in the range of 2 to 5 nm, and the diameter of these hillocks is in the range of 50 to 250 nanometers. These crystal surface morphological features are believed to be caused in the high energy boron ion implantation process.
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