Abstract
Lead selenide colloidal quantum dots (PbSe CQDs) have the characteristics of an adjustable band gap, low cost, and easy processing. It is one of the ideal materials for developing infrared photodetectors and has broad application prospects in optical fiber communication, biomedical imaging, national defense, and other fields. Indium gallium zinc oxide (IGZO) is an n-type semiconductor material with high mobility. In this paper, an infrared photodetector with IGZO-PbSe CQDs heterojunction is fabricated, with the PbSe CQDs capped by MPA, TBAI, or EDT. The photodetection performance of these photodetectors is studied and compared, to reveal the best choice of the surface ligand of the PbSe CQDs for the photodetection. This work provides useful and solid knowledge that shall enlighten the optoelectronic application of PbSe CQDs.
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