Abstract
AbstractTemperature programmed desorption (TPD) studies in ultra high vacuum revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe. Dimethylcadmium partially decomposes to produce Cd adatoms; a large fraction of the excess Cd atoms desorb upon heating. In contrast, DETe desorbs without decomposing, suggesting that the rate limiting step in CdTe MOCVD on CdTe(111)A is surface decomposition of the tellurium alkyl.
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