Abstract
The optical and chemical properties of gallium arsenide (GaAs) surfaces treated by ammonium sulfide ((NH4)2S) treatments were studied via low-temperature photoluminescence (PL). From the PL mapping and Atomic Force Microscope (AFM) results, the treatment process by (NH4)2S is quite effective to remove the oxide layer of GaAs.The PL intensity of (NH4)2S-passivated sample was higher than the untreated sample, and the homogeneity of passivated surface was much better. This strategy provides superior promising passivation method for III-V compound semiconductor material in high-speed and optoelectronic device applications.
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