The surface and electrical properties of the Al/Ba2P2O7/p-Si heterojunctions in wide range of temperature and frequency

Abstract

In the present study, the Al/Ba2P2O7/p-Si device was fabricated using barium based pyrophosphate at the interface layer. The interface layer and metallic contact were deposited with thermal evaporation systems on p type Si. Better understand surface morphology and material characteristics were studied by atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray difraction (XRD). The effect on interface layer was observed via electrical measurements. The electrical and photoresponsivity characteristics of device were investigated with curent-voltage (I-V) measurements at dark and illumination conditions. Some diode parameters such as ideality factor, barrier height and series resistance of device were calculated using thermionic emission (TE) theory and Norde functions. They were found to be 3.8, 0.63 eV and 1.73 kΩ at room temperature, respectively. The current-voltage-temperature (I-V-T) measurements were taken to understand the temperature response of the device. The other electrical characteristics of device are capacitance–conductance–voltage (C–G–V) measurements for various frequencies. The some electrical parameters such as Fermi level (Ef), barrier height and donor concentration (Nd) were calculated with C-G-V measurements.