Abstract
Undoped and Tellurium doped ZnO microrods were synthesized on a high-quality ZnO template via chemical vapor transport method in a horizontal tube furnace without any catalyst. Vertically aligned ZnO microrods grow along the c-axis orientation with a well-ordered wurtzite structure in both undoped and Te-doped samples. Te incorporation was confirmed through EDX and XPS investigations, and Te dopants occupy O sites in the Te-doped ZnO microrods. Combining XPS, Raman, and photoluminescence analyses, we found that zinc interstitial related shallow donors are suppressed in Te-doped ZnO microrods, which is beneficial to obtain p-type ZnO microrods with suitable strategy in next step.
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