The Super Capacitor with Nanosic Film Electrode

Abstract

Nano-SiC was mixed with nanocrystalline graphite and ethylic cellulose to paste. In order to fabricate Nano-SiC film electrode of super capacitor, a series of sol-gel Nano-SiC film with different proportions are designed test intentionally. Nano-SiC film was fixed on metal substrates using three-steps sintering process. The perovskite structure CaCu3Ti4O12 (of CCTO) ceramics has giant permittivity, low dielectric loss, good thermal stability and dielectric constant in a wide temperature range has very broad application prospects in microelectronics. In this paper, the solid state reaction sintering can be divided into two categories: sintering at 1373K at different times; first heating to 1423K then immediately cooling to 1373K and keeping for different times. The CCTO ceramic dielectric constant and dielectric loss decreased with frequency rises. A super capacitor was designed based on CCTO ceramics dielectric and Nano-SiC film electrode.