Abstract
AbstractBe‐doped GaAs epitaxial layers were grown on (100), (111)A, (111)B and (110) GaAs substrates by MLE. In the growth on (111)A GaAs, the incorporation of Be was enhanced significantly when Be(MeCp)2 was introduced after exposure to AsH3 (AA mode) at 277 °C, and consequently Be concentrations up to 8x1019 cm–3 were achieved. It was shown that the concentration of Be on (111)B GaAs substrate was high when exposed to Be(MeCp)2 after exposure to TEG. The relationship between the surface stoichiometry and Be incorporation is discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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