The Study of Transport Properties of (III−Mn) V Diluted Magnetic Semiconductors

Abstract

We investigated the transport properties of diluted magnetic semiconductors (DMSs) theoretically by using the Heisenberg and Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange interaction models by considering both spin and charge disorder. The formalism is applied to the specific case of Ga 1 − x Mn x As . Using the Heisenberg model and the Green function formalism the total thermal excitation of the magnon is calculated. The magnetization and Curie temperature of Mn -doped GaAs is calculated. The theoretical calculation of T C of Ga 1 − x Mn x As at x = 0.08 has a good agreement with the experimental calculation at x = 0.08 (i.e., 162 k). The exchange interaction constant and spin-dependent relaxation time is calculated by using RKKY interaction. The electrical conductivity and hole mobility are calculated by using the Boltzmann transport equation and the spin-dependent relaxation time. The electrical conductivity of Mn -doped III–V DMS is exponentially increased with temperature and magnetic impurity concentration. Hole mobility of Mn -doped III–V diluted magnetic semiconductor is increased with the magnetic impurity concentration.