The Study of TiWN Schottky Contacts on n-Ga0.51 In0.49P

Abstract

ABSTRACTThe first study of the TiW nitrides (TiWNx) as the Schottky contact metals to the n type Ga0.51In0 49P has been made. The Ga0.51 In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. The RF-magnetron sputtering system was utilized for the nitride deposition. The thermal stability of the nitride films were studied using rapid thermal annealing (RTA) method. Both the electrical characteristics and the materials characteristics were investigated. The materials properties of the nitride films were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). The TiWNx Schottky contacts demonstrate excellent electrical and physical characteristics, even after high temperature annealing. The barrier heights range from 0.81 to 1.05 eV depending on the content of the nitrogen and the annealing conditions. The XRD and AES results show no indication of interaction at the TiWNX/GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the contact were attributed to the high bandgap nature of the Ga0.51In0.49P and the incorporation of nitrogen into the TiW films.