Abstract
A structure in which a 1000 Å thick AlAs layer is sandwiched between 1000 Å thick GaAs cap layer and 2000 Å GaAs buffer layer was subsequently grown by molecular beam epitaxy on the GaAs substrate. The AlAs layer was laterally oxidized in N 2 bubbled H 2O vapor ambient at 400°C for 20, 30, 40, 60, and 120 min. It was found that the thermal stability of the mesas is very dependent on the removal rate of volatile products, such as As and As 2O 3. The removal of volatile products is dependent on the oxidation time and temperature. The Raman spectra presented here proved that the spectra were different from samples, oxidized for different time durations.
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