The Study of the Origin of the Anomalously Large Thermoelectric Power of Si/Ge Superlattice Thin Film

Abstract

We present the experimental framework for the origin of the anomalously large thermoelectric power for Si and Au-doped Ge superlattice thin film. The thermoelectric power of the sample still remains anomalously large even though the superlattice structure begins to collapse. An amorphous Ge thin film displays large thermoelectric power. The crystallized samples have almost the same thermoelectric power as that of conventional SiGe bulk samples. The main cause of this anomalously large thermoelectric power of Si/Ge superlattice thin films is amorphous Ge layer.