Abstract
Amorphous carbon (a-C) and carbon nitrogen (a-CN) films were synthesized using plasma immersion ion implantation and deposition (PIII-D) under different N2 flow at room temperature (R.T.). Lifshitz-van der Waals/acid-base approach (LW-AB) was introduced in order to study films’ surface energy deeply. The results showed that the capability of the surface of the film on receive electron changed with N2 flow, which effected platelet adhesion of film strongly. Hall effects tests were employed to characterize the electrical properties of the films. The results showed that the as-deposited films exhibited n-type semiconductor characteristic, and carrier concentration of the films decreased with N2 flow increasing. Raman spectra with 514nm laser-source were employed to analyze the structural of the films.
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