The study of slow relaxation of charged centres in insulator–semiconductor structures using fluorescent molecule probes

Abstract

The insulator charge relaxation and corresponding change of the fast surface state in the semiconductor–oxide system are investigated. The fluorescence of adsorbed dye molecules is used for the differential anlaysis of the electronic and ionic charge relaxation in an insulator. It is found that charge relaxation is accompanied by the following effects: fluorescence decay, spectral shift of fluorescence maximum, and the change of the fluorescence anisotropy coefficient. [Russian Text Ignored].