Abstract
Copying the two-step-annealing procedure in self-aligned silicide technology, Ti/Si samples deposited under ultra-high vacuum were annealed at low temperatures, selective etched, and again annealed at high temperatures in our RHT-6000 rapid heat treatment equipment for VLSI with nitrogen as the protective ambient. The experimental results showed that titanium silicide and nitride were formed simultaneously in the thin film. The formation of titanium nitride was studied in detail. In addition, we studied the electrical properties of the final product TiN-TiSi/sub 2/ and its diffusion barrier function in the Al/TiN-TiSi/sub 2//Si(n/sup +/p) diode structure.
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