Abstract
Abstract To form vacancy-defects, a type Ia diamond single crystal with a nitrogen impurity in different forms was 3.5 MeV electron-irradiated with increasing doses of 5 × 1016, 2 × 1017, 4 × 1017 and 2 × 1018 c/cm2. After each dose the specimen was investigated by positron annihilation (ACAR), EPR and optical spectroscopy in visible and IR regions. By the direct method of positron annihilation the formation of vacancies in neutral and negative charge states was established in the specimen. Specific trapping rates and trapping cross-sections of positions of both defects were estimated.
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