Abstract
The oxidation processes on a TiAl surface induced by a hyperthermal O2 molecular beam (HOMB) with a translational energy of 2.2 eV was studied by X-ray photoemission spectroscopy in conjunction with synchrotron radiation. At a surface temperature of 300 K, the simultaneous growth of Al and Ti oxides accompanied with the segregation of Al2O3 near the surface was observed. The efficiency of oxidation for the HOMB incidence was smaller than that for O2 backfilling (25 meV). Furthermore, the chemical compositions of oxide species (Al2O3, Ti2O3, TiO2) on the TiAl surface were independent of the translational energy of incident O2 molecule. The present results suggest that the oxidation on TiAl surface proceed via precursor molecular states.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEJ Transactions on Electronics, Information and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
