Abstract
The III-N material system (including alloys of InN, AlN, and GaN) has several characteristics which give it key advantages over the existing solar cell materials, for example, the high absorption coefficient and high carrier mobility, more important, the wide range of band gap energies which spans nearly the entire solar spectrum. In this paper, we fabricated a multiple quantum well (MQW) InGaN/GaN solar cell. The photovoltaic characteristics of the device was demonstrated that, the short circuit current density (J SC ) is about 0.43mA/cm 2 , the open circuit voltage is about 2.2 eV, and the fill factor is about 81%. But the peak external quantum efficiency (EQE) is not very high, only 30%. And the conversion efficiency is about 0.83%, so more work for device design should be done in the future.
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