The Study of Midinfrared Extremely Narrow Dual-Band Absorber Based on a Novel Metamaterial Structure

Zichun Li,Yingjiao Zhai,Jinhua Li,Ye Zhang,Yu Zhang,Xueying Chu,Haibin Lv

doi:10.1155/2021/1048309

Zichun Li, Yingjiao Zhai + Show 5 more

Open Access

https://doi.org/10.1155/2021/1048309

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Abstract

Due to the problems that the metal pattern layer on the top of the traditional metamaterial structure is easy to be oxidized and easy to fall off, in this paper, a novel semiconductor metamaterial nanostructure composed of a periodic array of GaAs-SiO2 cubes and a gold (Au) film has been proposed. Using FDTD solutions software to prove this metamaterial structure can achieve ultranarrow dual-band, nearly perfect absorption with a maximum absorbance of 99% and a full-width at half-maximum (FWHM) value that is less than 20 nm in the midinfrared region. The refractive index sensitivity is demonstrated by changing the background index and analyzing the absorption performance. It had been proved that this absorber has high sensitivity (2000/RIU and 1300/RIU). Using semiconductor material instead of the metal material of the top pattern layer can effectively inhibit the performance failure of the metamaterial structure caused by metal oxidation. The proposed narrow, dual-band metamaterial absorber shows promising prospects in applications such as infrared detection and imaging.

Highlights

Metamaterials are a class of artificial materials constructed with periodic “meta-atoms” that can be engineered to manipulate electromagnetic waves and produce unconventional optical properties
High free-electron concentration makes the metal structures of metamaterials easy to achieve perfect absorption, many modes of resonance lead to a wider halfwidth of the absorption peak
In this work, based on the above problems, we propose a new type of semiconductor metamaterial structure that used semiconductor materials instead of the top metal pattern layer

Summary

Introduction

Metamaterials are a class of artificial materials constructed with periodic “meta-atoms” that can be engineered to manipulate electromagnetic waves and produce unconventional optical properties. Since the pioneering work of Pendry [1], several theoretical and experimental demonstrations of functioning electromagnetic metamaterials have been reported [2, 3] Among these applications, perfect metamaterial absorbers (PMAs) can harvest the power of incident light with nearly 100% efficiency over a wide range of wavelengths [4,5,6]. In this work, based on the above problems, we propose a new type of semiconductor metamaterial structure that used semiconductor materials instead of the top metal pattern layer This metamaterial structure can effectively prevent the top pattern layer from being oxidized and not closely bonded to the dielectric layer. GaAs is a novel semiconductor material owing to its metallic and semiconductor properties [23] It could conduct surface plasmon resonance that will enable the metamaterial structure to achieve perfect absorption characteristics [24].

Method and Model

Geometric Parameters

Sensitivity Analysis

Findings

Conclusion