Abstract
Abstract MgB 2 /BN/MgB 2 trilayer films have been fabricated by using hybrid physical–chemical vapor deposition (HPCVD) method for the MgB 2 layers and chemical vapor deposition (CVD) method for the BN layers in the same reactor. The films are studied by X-ray photoelectron spectroscopy (XPS), transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray diffraction (XRD) and magnetization measurements. These test outcomes indicate the trilayer films are grown without deteriorating the superconductivity of MgB 2 films. Our results show that it is feasible to grow MgB 2 /BN/MgB 2 trilayer films in the same reactor sequentially, which has the advantage of reducing contamination during the growth. This therefore opens the door for fabricating all-MgB 2 Josephson junctions by using the BN film as the insulating layer.
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