Abstract
ABSTRACTA study of Mg2Sn thin film material expected a high Thermo-Electrical (TE) characteristics in Room Temperature (RT) range is presented. The single phase (cubic crystal) Mg2Sn thin film is successfully formed on a glass substrate at 550 degree C with the conventional magnetron sputtering process when a metal layer of silver (Ag) or indium (In) of less than a hundred nanometer thickness is pre-coated before the deposition of Mg2Sn. The pre-coated material of Ag or In is diffused into the Mg2Sn film. P-type doping for the Mg2Sn by Ag is successful in this process, but n-type doping for the Mg2Sn film by In is not. In addition, it is found on Ag doping films that the Seebeck coefficient doesn’t decrease with the increase of the conductivity due to Ag doping which is different from the dependency of Ag doping in the bulk of Mg2Sn.
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