The Study of Latex Sphere Lithography for High Aspect Ratio Dry Silicon Etching

Abstract

Cryogenic Etching In article number 1900535, Ivan Morozov and co-workers present a way to obtain an array of ordered silicon structures using nanosphere lithography and cryogenic etching. The developed technology of cryogenic etch throw silicon oxide mask allows one to obtain a highly ordered array of vertically aligned silicon structures on the entire surface of four inches silicon substrates.