Abstract
A novel photodiode was fabricated for detecting the weak emission light of infrared up-conversion material. This GaAsP/GaP photodiode has a PIN structure, with the spectral response range is 500nm to 650nm, and the peak sensitivity wavelength is 555nm. The dark current is below 4nA at a bias of-5V. The response characteristics is 0.12μA/μW at a bias of-5V.
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