Abstract
Surface Acoustic Wave Filter (SAWF) is widely applied in military and civil fields as Radar, Broadcast, Television, etc. The SAWF that the central operating frequency exceeds 1 GHz is one of the key elements in modern high frequency communication system. In this paper, on the free-standing diamond film and silicon wafer substrates, two kinds of SAWF are manufactured. Based on the same IDT structure that the interdigital width is 3μm, the center frequency of ZnO/diamond structures can reach to 1.03 GHz, while the ZnO/Si structures is 120 MHz. The result express that the SAWF on the base of diamond can work in high frequency mode, while the Insertion Loss is high, reach to 23dB.
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