Abstract
The effects of various parameters in copper electroplating electrolyte on the filling characteristics of through silicon via(TSVs). Among the various parameters, the concentration of dissolved oxygen was found to be susceptible to bottom-up filling rate. The concentration of dissolved oxygen was effectively lowered by installing the hardware named 'degasser' at the circulation line. The installation of 'degasser' enabled the maintenance of stable bottom-up filling rates for the defect-free filling of TSVs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
