Abstract
LiTaO3 single crystals were implanted by 100keV H-ion or He-ion. The results indicate that H-ion implantation creates a lower damage level than the He-ion implantation does, but the yield of oxygen vacancy produced by H-ion implantation is far higher than by He-ion implantation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
