The study of channeling parameters of protons along axial and planar directions of Si

Abstract

In this work, the channeling parameters, the ratio of channeling to random stopping power, and the mean channeling distance, of protons along the 〈100〉, 〈110〉, {100} and {110} directions of Si were studied in terms of the atomic potential of channels. The channeling parameters were deduced using the simulation of the channeling Rutherford backscattering spectra based on the exponential dechanneling function. The best simulation parameters were set using the Levenberg- Marquardt algorithm. The RBS/C spectra were taken in energy interval 1400–2200 keV, using a Si wafer. Considering the deduced parameters along the 〈100〉, 〈110〉, {100} and {110} directions in terms of the atomic potential of channels and using the data along the 〈111〉 and {111} channels reported in the literature, the channeling behavior of protons along the 〈111〉 and {111} direction was explained concerning the shallow and deep potentials. Finally, the mean channeling distance along the {111} channel was estimated.