Abstract
Secondary-ion mass spectrometry and Auger electron spectroscopy measurements combined with Hall data have indicated high levels of electrically active carbon impurities in InSb films grown by metalorganic magnetron sputtering. Background impurity concentrations in the range of 5 × 1018 cm−3 were observed for films grown at optimum deposition conditions. While it was also observed that the level of carbon in the layers decreased with increasing substrate temperature and V-III ratio, the addition of small amounts of molecular hydrogen (H2) to the sputtering gas resulted in an order of magnitude decrease in the carbon content of the as-grown InSb layers. Mass spectrometric studies suggest that the major source of carbon contamination in the layers is the methyl radicals produced from the pyrolysis of trimethylindium.
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