The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity

Abstract

Boron-doped nanocrystalline silicon film was prepared through plasma enhanced chemical vapor deposition (PECVD) on silicon substrate and glass substrate under the high deposition pressure (332.5-399Pa) and the high deposition temperature (320-360°C). The film was investigated by Raman, electron probe microanalyser, conductivity and mobility experimenting techniques. The conductivity of the boron-doped nanocrystalline silicon film was 2.97×102Ω-1cm-1. The results showed that the interface between the film and the silicon substrate might have quantum spot and small size effect, causing the increasing of conductivity.