Abstract
Analysis of a random population of oxygen vacancies in several amorphous SiO/sub 2/ structures, using first-principles calculations, shows that a distribution of defect states exists due to different local structure. The results also reveal a new structure of an E(/spl gamma//sup 5/)', a five-fold coordinated Si atom, which assists in explaining reverse-bias switching behavior, and the subsequent reduction of E/sub /spl gamma//' defects. The distribution of energy levels in the amorphous SiO/sub 2/ energy gap is consistent with experimental data on both shallow and deep hole traps. The relative frequency of the occurrence for the different hole traps is determined by examining the local geometries of all the possible oxygen vacancy sites in the amorphous structures. Most oxygen vacancies in amorphous SiO/sub 2/ are found to form dimer defects upon hole capture, with the remainder almost evenly divided between puckered defects that allow dipole formation upon electron capture (E(/spl gamma//sup 4/)') and those that do not (E(/spl gamma//sup 5/)').
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
