Abstract

A cadmium-antimony-oxide semiconductor ceramic synthesized by heating CdO and Sb/sub 2/O/sub 5/ is discussed. Its composition, structure, phase transition, and electrical properties have been systematically studied. The study indicates that the material is an n-type semiconductor, Cd/sub 6/Sb/sub 2/O/sub 10/. A reversible structural phase transformation occurs at about 240 degrees C. The transition temperature of the heating and cooling processes are 246 degrees C and 228 degrees C, respectively. The R-T curves can be divided into three temperature regions. The conduction mechanism in the three regions and the associated defect structure and phase transformation properties are discussed. The activation energy and carrier mobilities are calculated. >

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