Abstract
A brief review of the methods used for obtaining thin polycrystalline and monocrystalline UO 2 films, by evaporation or sputtering in vacuum on alkali halide substrates, is presented. The presence of weak subsidiary reflections in the diffraction patterns of nearly epitaxial UO 2 thin films observed by us and by others, is attributed to crystallites grown in two (110) orientations, rotated 90° relative to each other. Some similarities in the growth behaviour of the thin UO 2 and CaF 2 films on the NaCl substrates are outlined. Finally the mean parameters are summarized which are necessary to ensure the epitaxial growth: the substrate temperature between 320 and 350°C, the existence of colloidal centres (Pb 0, Ag 0, Na 0) in the NaCl substrate, the preheating treatment of the NaCl substrate at 400°C, and the deposition rate exceeding 5Å/s.
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