Abstract
This work reports on the structure of defects around Sn atoms in amorphous germanium-tin alloys. The influence of atomic hydrogen on the density of such defects is reported. The samples were deposited by rf sputtering compound targets, and analized by Rutherford backscattering spectrometry and conversion electron Mössbauer spectroscopy. Besides the known substitutional position of Sn atoms in the a-Ge network, a new octahedrally bonded Sn configuration appears resulting from the trapping of Ge vacancies by Sn atoms.
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