Abstract
Abstract The structure of d.c. magnetron sputtered Al-1%Si films has been characterized, using X-ray diffractometry to quantify the film orientation and scanning electron microscopy to quantify the grain size. The structure is found to depend on film thickness and deposition temperature for batch and continuous modes of deposition and, in addition, substrate position and the number of revolutions used during film deposition for batch mode deposition. The choice of substrate used has a large effect on the film orientation with thick low pressure chemically vapour deposited oxides causing a large reduction. Limits can be placed on the deposition process to achieve a relatively stable film structure, while care should be exercised in the choice of monitor substrate.
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