Abstract
Na0.5Bi0.5(Ti0.98Mn0.02)O3 (NBTMn) thin film was fabricated on fluorine-doped tin oxide (FTO)/glass substrate via a chemical solution decomposition method. The microstructure and electrical performances of NBTMn thin film were investigated. The XRD pattern reveals that the NBTMn thin film is crystallised into a phase-pure polycrystalline perovskite structure. Also the film possesses a homogeneous structure. Enhanced ferroelectricity is obtained with a large remnant polarisation (Pr) of 19.8 μC/cm2 reflected by polarisation–electric field (P–E) hysteresis loop, which is consistent with the typical butterfly-shaped capacitance–voltage (C–V) curve. At the optimum applied voltage of ±22 V, a maximum value of 27% for dielectric tunability is obtained. Additionally, the NBTMn thin film shows a dielectric constant of 422, dissipation factor of 0.06 and figure of merit of 4.5 at 100 kHz.
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