Abstract
Using the finite-difference time-domain (FDTD) method, we designed an ultra-thin Ge/GaAs/P3HT:PCBM hybrid solar cell (HSC), which showed good effects of ultra-wideband (300 nm–1200 nm), high absorption, and a short-circuit current density of 44.7 mA/cm2. By changing the thickness of the active layer P3HT:PCBM, we analyzed the capture of electron-hole pairs. We also studied the effect of Al2O3 on the absorption performance of the cell. Through adding metal Al nanoparticles (Al-NPs) and then analyzing the figures of absorption and electric field intensity, we found that surface plasma is the main cause of solar cell absorption enhancement, and we explain the mechanism. The results show that the broadband absorption of the solar cell is high, and it plays a great role in capturing sunlight, which will be of great significance in the field of solar cell research.
Highlights
Structure Design and PhotoelectricWith the increasing shortage of coal, oil, and natural gas and the strong support of new energy, solar energy, as a clean and pollution-free renewable energy with rich resources, has become a hot research topic among scholars [1,2,3,4]
GaAs is widely studied in solar cells because of its high electron saturation rate and electron mobility [7]
We studied the absorption characteristics of the organic active layer of P3HT:PCBM deposited on the GaAs surface to analyze the specific mechanism
Summary
Structure Design and PhotoelectricWith the increasing shortage of coal, oil, and natural gas and the strong support of new energy, solar energy, as a clean and pollution-free renewable energy with rich resources, has become a hot research topic among scholars [1,2,3,4]. Silicon is the most widely used commercial material for solar cells [5,6], GaAs has its own advantages. GaAs bandgap is 1.42 eV, and Si bandgap is 1.12 eV. GaAs has a high electron mobility, up to 8000 cm2 /V·s; the electron mobility of silicon is 1350 cm2 /V·s. GaAs has a wider bandgap and higher absorption coefficient than Si. A photoactive layer of several microns is enough to use the transmitted light, because of the direct band gap in GaAs as compared to Si or other semiconductor materials. GaAs is widely studied in solar cells because of its high electron saturation rate and electron mobility [7].
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