Abstract
Thin ferroelectric films with thicknesses of (0.6–4.1) × 10 −6m have been grown by single-target r.f. sputtering. Powdered lead zirconate-titanate (PZT) type ceramics were used as a target. Microstructure and both dielectric and piezoelectric properties of a thin film depend on its thickness. When the thickness increases, the thermoelastic stresses increase and the influence of the oxide transition layer in the metallic substrate-thin ferroelectric film interface decreases. Thin PZT-type ferroelectric films are characterized by high values of the piezoelectric modulus d 33 and weak temperature dependences. All these create an opportunity for their application to electromechanical transducers (e.g. in electroacoustics).
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