Abstract
Silicon (Si) containing diamond-like carbon films are deposited by RF plasma CVD with reactant gases of CH 4, SiH 4 and Ar. The effects of substrate temperature and RF power on film structure, residual stress and adhesion are studied. The tensile cracking failure mode for films on Corning 7059 glass shows full adherence properties. A structure model is proposed, and the residual stress of the films is compressive. The relation between the structure and the residual compressive stress is investigated.
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