Abstract
Mn-doped SiGe nanowires (Mn-SGNWs) have been grown on silicon substrates by using simple thermal evaporation without catalyst. TEM and EDS studies indicate the SGNWs are amorphous and the approximate atomic ratio of Si:Ge:Mn is 93.5: 3.6:2.9. Detailed Raman and XRD studies reveal the short-range ordered structure and phase components in the SGNWs, which results in the enhanced magnetization of one order of magnitude higher than that of amorphous Si93.5Mn3.7:H thin films at room temperature. Optical studies show that the samples possess an optical band gap of ∼3.9 eV, exhibit a sharp absorption at 319 nm and emit intense violet and blue light under 325-nm photon excitation with small thermal quenching, which extends the potential application of amorphous SiGe materials into shorter-wavelength UV and visible region. Finally, the catalyst-free growth mechanism for the Mn-SGNWs is proposed by considering phase diagram and the critical role of thermodynamic fluctuation during the growth. Our results may be valuable for both basic science and potential applications of SGNW based materials.
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