Abstract
High-quality ZnO films have been prepared by using zinc ion implantation into silica followed by post-thermal annealing in oxygen at 700°C for varying lengths of time. The dependence of the structure and photoluminescence of ZnO films on the annealing time has been investigated using X-ray diffraction and photoluminescence spectra. The X-ray photoelectron spectra were used to investigate the ZnO film formation process. As the annealing time increased to 2 h, ZnO film exhibited (0 0 2)-preferred orientation and an intense UV emission with a full width of 11 nm (96 meV) at half maximum positioned at ≈377 nm (3.29 eV) at room temperature.
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